Proceedings of the 11th Workshop on Quantum Solar Energy Conversion - (QUANTSOL'98)
March 14-19, 1999, Wildhaus, Switzerland


Photoelectrochemistry of CdSexTe1-x

Christian Wirts (1), Mare Altosaar (2), Malle Krunks (2), Tiit Varema (2), Enn Mellikov (2) and Dieter Meissner (1, 3)

(1) Institute of Solar Energy Research (ISFH), Sokelantstr. 5, D-30165 Hannover, Germany
(2) Tallinn Technical University, Chair of Semiconducting Materials Technology, Ehitajate tee 5, EE-0026 Tallinn, Estonia
(3) present address: AQR; Wendelinusstr. 85, D-52425 Juelich, Germany

Solid solutions of cadmium chalcogenides are extremely interesting materials for solar energy conversion since their band gap varies with composition. Thereby a tailoring of the absorption edge becomes possible which allows to optimize the material for different applications. However, when the composition of the semiconductor is changed, also the flat band potential, the conductivity and the surface chemistry of the material changes.
Moreover, in our careful investigation of the photoelectrochemical consequences of these effects we also developed a new strategy to understand the influence of charge trapping in the space charge region on the impedance behavior of these electrodes. This is of general interest also for impedance measurements with solid state devices. Strong interactions with the electrolyte lead to a pronounced shift of the flat band potential of cadmium chalcogenides in polysulfide as well as in ferro/ferri cyanide solutions compared to alkaline solutions without additional redox couples by several tens of a volt.
Upon illumination the flat band potential of CdSe is not shifted up to photocurrent densities of 40 mA/cm2, whereas that of CdTe is shifted in positive direction already by low light intensities. This can be explained by the different positions of the valence band edges of the two materials leading to a pronounced decreased of the overpotential of holes being transferred from the valence band to the redox couple from 0.9 V for CdSe to less than 0.3 V for CdTe. The obviously high necessary overvoltages may even lead to a blocking of the charge transfer reaction at CdTe for stronger illumination conditions. This is the reason for the instability of the CdTe/polysulfide-system.
Adding cyanide to the ferro/ferri cyanide redox couple leads to an additional shift of the flat band potential by about 0.2 V in negative direction. Whereas CdSe remains still stable CdTe is unstable already without additional cyanide. An additional shift of the band edges by cyanide even leads to a stable corrosion current for low current densities without the formation of a blocking layer. Here a diffusion controlled six hole corrosion process can be determined experimentally. Therefore the cyanide supported ferri/ferro cyanide solution is well suitable for photoetching processes of CdTe.
Ternary CdSexTe1-x electrodes exhibit a minimum in their band gaps with a selenium content of 40% with an ideal band gap of 1.36 eV. However, their corrosion behavior becomes rather complex due to their chemical behavior being determined by Te as well as Se. Therefore only redox couples strongly interacting with the surface of these material have yet led to a stable photoelectrochemical behavior. Further investigations using very fast redox couples and/or organic electrolytes need to be performed.

Acknowledgement
Financial support by the Volkswagenstiftung under contract No. I/71902 is gratefully acknowledged.


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Last updated March 23, 1999